K. Tachiki

most citedReduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing

21 citations · 24 across the 2 of their papers we have counts for

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cond-mat.mtrl-sci2023★ 3 cited

Effect of nitrogen introduced at the SiC/SiO $_{2}$ interface and SiC side on the electronic states by first-principles calculation

Keita Tachiki, Yusuke Nishiya, Jun-ichi Iwata +1

In this study, using first-principles calculations, we investigate the behavior of electrons at the SiC/SiO $_{2}$ interface when nitrogen is introduced as a dopant within a few nm of…

cond-mat.mtrl-sci2019★ 21 cited

Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing

Takuma Kobayashi, Keita Tachiki, Koji Ito +1

We report that annealing in low-oxygen-partial-pressure (low-p $_{O2}$ ) ambient is effective in reducing the interface state density (D $_{IT}$ ) at a SiC (0001)/SiO $_{2}$ …

Effect of nitrogen introduced at the SiC/SiO2​ interface and SiC side on the electronic states by first-principles calculation

Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing

Effect of nitrogen introduced at the SiC/SiO $_{2}$ interface and SiC side on the electronic states by first-principles calculation