Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing

Takuma Kobayashi, Keita Tachiki, Koji Ito +1

We report that annealing in low-oxygen-partial-pressure (low-p${}_{O2}$) ambient is effective in reducing the interface state density (D${}_{\mathrm{IT}}$) at a SiC (0001)/SiO${}_2$…