217 citations · 950 across the 12 of their papers we have counts for
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Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology
Yu-Ming Lin, Damon B. Farmer, Keith A. Jenkins +7
This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates.…
Multi-carrier Transport in Epitaxial Multi-layer Graphene
Yu-Ming Lin, Christos Dimitrakopoulos, Damon B. Farmer +9
Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-la…
Conducting Atomic Force Microscopy Studies of Nanoscale Cobalt Silicide Schottky Barriers on Si(111) and Si(100)
Joseph L. Tedesco, J. E. Rowe, Robert J. Nemanich
Cobalt silicide (CoSi2) islands have been formed by the deposition of thin films (~0.1 to 0.3 nm) of cobalt on clean Si(111) and Si(100) substrates in ultrahigh vacuum (UHV) follow…
Titanium Silicide Islands on Atomically Clean Si(100): Identifying Single Electron Tunneling Effects
Joseph L. Tedesco, J. E. Rowe, Robert J. Nemanich
Titanium silicide islands have been formed by the ultrahigh vacuum deposition of thin films of titanium (< 2 nm) on atomically clean Si(100) substrates followed by annealing to ~80…
Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide
Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward +7
Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged…
Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide
Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward +7
Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the f…