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researcher

Y. Illarionov

4 papers hereh-index 192.2k citations87 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author1
  • middle author1

Across the 2 of 4 papers where every author was matched, so the position is known.

fields
  • physics.app-ph4
same name
  • Y. Illarionov — 1 paper, h 1
  • Y. Illarionov — 1 paper, h 7

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20192023
most citedOn the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices

366 citations · 517 across the 4 of their papers we have counts for

collaborators
Showing 2021Show all

1 paper · 1 filter

physics.app-ph2021★ 138 cited

Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning

Theresia Knobloch, Burkay Uzlu, Yury Yu. Illarionov +7

Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability.…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.