Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO${}_3$-SrTiO${}_3$-Based Heterostructures

C. Woltmann, T. Harada, H. Boschker +4

The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from La…