V. Srot

activity

20152026

most citedField Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO

_{3}

-SrTiO

_{3}

-Based Heterostructures

38 citations · 73 across the 4 of their papers we have counts for

collaborators

Showing cond-mat.mes-hallShow all

3 papers · 1 filter

cond-mat.mes-hall2022★ 22 cited

An optimized TEM specimen preparation method of quantum nanostructures

Hongguang Wang, Vesna Srot, Bernhard Fenk +3

Electron transparent TEM lamella with unaltered microstructure and chemistry is the prerequisite for successful TEM explorations. Currently, TEM specimen preparation of quantum nan…

cond-mat.mes-hall2019★ 13 cited

Magnetic Properties of Epitaxially-grown $S r R u O_{3}$ Nanodots

Gennadii Laskin, Hongguang Wang, Hans Boschker +4

We present the fabrication and exploration of arrays of nanodots of $S r R u O_{3}$ with dot sizes between 500 nm and 15 nm. Down to the smallest dot size explored, the samples were foun…

cond-mat.mes-hall2015★ 38 cited

Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO $_{3}$ -SrTiO $_{3}$ -Based Heterostructures

C. Woltmann, T. Harada, H. Boschker +4

The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from La…

An optimized TEM specimen preparation method of quantum nanostructures

Magnetic Properties of Epitaxially-grown SrRuO3​ Nanodots

Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO3​-SrTiO3​-Based Heterostructures

Magnetic Properties of Epitaxially-grown $S r R u O_{3}$ Nanodots

Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO $_{3}$ -SrTiO $_{3}$ -Based Heterostructures