Achieving sub-1 Ohm-mm Non-Recess S/D Contact Resistance in GaN HEMTs Utilizing Simple CMOS Compatible La/Ti/Al/Ti Metal Contacts

Xinpeng Lin, Yumeng Zhu, Yongle Qi +10

In this paper, we report the use of lanthanum (La) in S/D contacts of GaN HEMTs, achieving 0.97 Ohm-mm contact resistance without S/D recess. The HEMTs show well-behaved electrical…