76 citations · 149 across the 6 of their papers we have counts for
6 papers
Complex Polymorphs Explored by Accurate and General-Purpose Machine-Learning Interatomic Potentials
Junlei Zhao, Jesper Byggmästar, Huan He +3
is a wide-bandgap semiconductor of emergent importance for applications in electronics and optoelectronics. However, vital information of the proper…
Lattice-aligned gallium oxynitride nanolayer for GaN surface enhancement and function extension
Junting Chen, Junlei Zhao, Sirui Feng +8
Gallium nitride (GaN), as a promising alternative semiconductor to silicon, is of well-established use in photoelectronic and electronic technology. However, the vulnerable GaN sur…
Two-dimensional Ferroelectric Ga2O3 Bilayers with Unusual Strain-engineered Interlayer Interactions
Junlei Zhao, Xinyu Wang, Haohao Chen +2
Two-dimensional (2D) van der Waals (vdW) materials and their bilayers have stimulated enormous interests in fundamental researches and technological applications. Recently, a group…
Bridging the gap between atomically thin semiconductors and metal leads
Xiangbin Cai, Zefei Wu, Xu Han +15
Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have…
Phase Transition of Two-Dimensional Ferroelectric and Paraelectric Ga2O3 Monolayer: A Density Functional Theory and Machine-Learning Study
Junlei Zhao, Jesper Byggmastar, Zhaofu Zhang +3
Ga2O3 is a wide-band-gap semiconductor of great interest for applications in electronics and optoelectronics. Two-dimensional (2D) Ga2O3 synthesized from top-down or bottom-up proc…
Achieving sub-1 Ohm-mm Non-Recess S/D Contact Resistance in GaN HEMTs Utilizing Simple CMOS Compatible La/Ti/Al/Ti Metal Contacts
Xinpeng Lin, Yumeng Zhu, Yongle Qi +10
In this paper, we report the use of lanthanum (La) in S/D contacts of GaN HEMTs, achieving 0.97 Ohm-mm contact resistance without S/D recess. The HEMTs show well-behaved electrical…