2 citations · 3 across the 2 of their papers we have counts for
2 papers
physics.app-ph2022★ 1 cited
Lattice-aligned gallium oxynitride nanolayer for GaN surface enhancement and function extension
Junting Chen, Junlei Zhao, Sirui Feng +8
Gallium nitride (GaN), as a promising alternative semiconductor to silicon, is of well-established use in photoelectronic and electronic technology. However, the vulnerable GaN sur…
physics.app-ph2019★ 2 cited
Achieving sub-1 Ohm-mm Non-Recess S/D Contact Resistance in GaN HEMTs Utilizing Simple CMOS Compatible La/Ti/Al/Ti Metal Contacts
Xinpeng Lin, Yumeng Zhu, Yongle Qi +10
In this paper, we report the use of lanthanum (La) in S/D contacts of GaN HEMTs, achieving 0.97 Ohm-mm contact resistance without S/D recess. The HEMTs show well-behaved electrical…