42 citations · 122 across the 16 of their papers we have counts for
8 papers · 1 filter
From Processing to Functionality: Engineering Accessible Material States in Cu-Embedded SiO Memristive Devices
Tobias Gergs, Rouven Lamprecht, Sahitya Yarragolla +5
Resistive switching in oxide-based devices is widely governed by stochastic defect processes, yet a predictive link between fabrication conditions and functional behavior remains e…
On the physical origins of switching diversity in Cu-embedded SiO memristive devices
Sahitya Yarragolla, Rouven Lamprecht, Tobias Gergs +4
Resistive switching devices with sub-stoichiometric SiO and pancake-like Cu nanoparticles (Cu-PCs) exhibit distinct macroscopic current-voltage characteristics classified as ca…
Physics-based Modeling and Simulation of Nanoparticle Networks
Torben Hemke, Robin Struck, Sahitya Yarragolla +3
This study presents the computational modeling and simulation of silver nanoparticle networks (NPNs), which, in the realm of neuromorphic computation, suggest to be a promising can…
Physics-separating artificial neural networks for predicting sputtering and thin film deposition of AlN in Ar/N discharges on experimental timescales
Tobias Gergs, Thomas Mussenbrock, Jan Trieschmann
Understanding and modeling plasma-surface interactions frame a multi-scale as well as multi-physics problem. Scale-bridging machine learning surface surrogate models have been demo…
Physics-separating artificial neural networks for predicting initial stages of Al sputtering and thin film deposition in Ar plasma discharges
Tobias Gergs, Thomas Mussenbrock, Jan Trieschmann
Simulations of Al thin film sputter depositions rely on accurate plasma and surface interaction models. Establishing the latter commonly requires a higher level of abstraction and…
Molecular Dynamics Study on the Role of Ar Ions in the Sputter Deposition of Al Thin Films
Tobias Gergs, Thomas Mussenbrock, Jan Trieschmann
Molecular dynamics simulations are often used to study sputtering and thin film growth. Compressive stresses in these thin films are generally assumed to be caused by a combination…
Generalized Method for Charge Transfer Equilibration in Reactive Molecular Dynamics
Tobias Gergs, Frederik Schmidt, Thomas Mussenbrock +1
Variable charge models (e.g., EEM, QEq, ES+) in reactive molecular dynamics simulations often inherently impose a global charge transfer between atoms (approximating each system as…
Integration of external electric fields in molecular dynamics simulation models for resistive switching devices
Tobias Gergs, Sven Dirkmann, Thomas Mussenbrock
Resistive switching devices emerged a huge amount of interest as promising candidates for non-volatile memories as well as artificial synapses due to their memristive behavior. The…