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Van der Waals device integration beyond the limits of van der Waals forces via adhesive matrix transfer
Peter F. Satterthwaite, Weikun Zhu, Patricia Jastrzebska-Perfect +12
Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however,…
Stable Operation of AlGaN/GaN HEMTs at 400C in air for 25 hours
Saleh Kargarrazi, Ananth Saran Yalamarthy, Peter F. Satterthwaite +3
In this letter, we report the operation of AlGaN/GaN HEMTs with Pd gates in air over a wide temperature range from 22C to 500C. The variation in the threshold volta…
Micro-Tesla Offset in Thermally Stable AlGaN/GaN 2DEG Hall-effect Plates using Current Spinning
Karen M. Dowling, Hannah S. Alpert, Ananth Saran Yalamarthy +5
This letter describes the characterization of a low-offset Hall-effect plate using the AlGaN/GaN two-dimensional electron gas(2DEG). Four-phase current spinning was used to reduce…
High responsivity, low dark current ultraviolet photodetector based on AlGaN/GaN interdigitated transducer
Peter F. Satterthwaite, Ananth Saran Yalamarthy, Noah A. Scandrette +2
An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under o…