5 papers
Stable Operation of AlGaN/GaN HEMTs at 400C in air for 25 hours
Saleh Kargarrazi, Ananth Saran Yalamarthy, Peter F. Satterthwaite +3
In this letter, we report the operation of AlGaN/GaN HEMTs with Pd gates in air over a wide temperature range from 22C to 500C. The variation in the threshold volta…
Gallium Nitride Photodetector Measurements of UV Emission from a Gaseous CH4/O2 Hybrid Rocket Igniter Plume
Hannah S. Alpert, Ananth Saran Yalamarthy, Peter F. Satterthwaite +6
Owing to its wide (3.4 eV) and direct-tunable band gap, gallium nitride (GaN) is an excellent material platform for UV photodetectors. GaN is also stable in radiation-rich and high…
Micro-Tesla Offset in Thermally Stable AlGaN/GaN 2DEG Hall-effect Plates using Current Spinning
Karen M. Dowling, Hannah S. Alpert, Ananth Saran Yalamarthy +5
This letter describes the characterization of a low-offset Hall-effect plate using the AlGaN/GaN two-dimensional electron gas(2DEG). Four-phase current spinning was used to reduce…
Significant Phonon Drag Enables High Power Factor in the AlGaN/GaN Two-Dimensional Electron Gas
Ananth Saran Yalamarthy, Miguel Muñoz Rojo, Alexandra Bruefach +6
In typical thermoelectric energy harvesters and sensors, the Seebeck effect is caused by diffusion of electrons or holes in a temperature gradient. However, the Seebeck effect can…
High responsivity, low dark current ultraviolet photodetector based on AlGaN/GaN interdigitated transducer
Peter F. Satterthwaite, Ananth Saran Yalamarthy, Noah A. Scandrette +2
An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under o…