182 citations · 435 across the 12 of their papers we have counts for
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Overview of CNM LGAD results: Boron Si-on-Si and epitaxial wafers
Chiara Grieco, Lucía Castillo García, Albert Doblas Moreno +6
Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra p-layer below the collection electrode which provides signal amplification. When the primary electrons…
First Results for the pLGAD Sensor for Low-Penetrating Particles
Waleed Khalid, Manfred Valentan, Albert Doblas +9
Silicon sensors are the go-to technology for high-precision sensors in particle physics. But only recently low-noise silicon sensors with internal amplification became available. T…
Inverse Low Gain Avalanche Detector (iLGAD) Periphery Design for X-Ray Applications
A. Doblas, D. Flores, S. Hidalgo +7
LGAD technology is established within the field of particle physics, as the baseline technology for the timing detectors of both the ATLAS and CMS upgrades at the HL-LHC. Pixelated…
Results on Proton-Irradiated 3D Pixel Sensors Interconnected to RD53A Readout ASIC
Jordi Duarte-Campderros, Esteban Curras, Marcos Fernandez +19
Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are reported. Sensors from FBK (Italy) and IMB-CNM (Spain) have been tested before…
Timing performance of small cell 3D silicon detectors
G. Kramberger, V. Cindro, D. Flores +8
A silicon 3D detector with a single cell of 50x50 um2 was produced and evaluated for timing applications. The measurements of time resolution were performed for 90Sr electrons with…
First study of small-cell 3D Silicon Pixel Detectors for the High Luminosity LHC
E. Currás, J. Duarte-Campderrós, M. Fernández +14
A study of 3D pixel sensors of cell size 50 μm x 50 μm fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout…
Radiation Hardness of Thin Low Gain Avalanche Detectors
G. Kramberger, M. Carulla, E. Cavallaro +18
Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impa…
Gain and time resolution of 45 m thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of n/cm
J. Lange, M. Carulla, E. Cavallaro +14
Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplication layer providing a gain of typically 10 to 50. Due to the combination of high signal-t…
Beam test results of a 16 ps timing system based on ultra-fast silicon detectors
N. Cartiglia, A. Staiano, V. Sola +40
In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 Ge…
Rad-hard vertical JFET switch for the HV-MUX system of the ATLAS upgrade Inner Tracker
Pablo Fernandez-Martinez, Miguel Ullan, David Flores +3
This work presents a new silicon vertical JFET (V-JFET) device, based on the trenched 3D-detector technology developed at IMB-CNM, to be used as switches for the High-Voltage power…
Design and Fabrication of an Optimum Peripheral Region for Low Gain Avalanche Detectors
Pablo Fernandez-Martinez, David Flores, Salvador Hidalgo +4
Low Gain Avalanche Detectors (LGAD) represent a remarkable advance in high energy particle detection, since they provide a moderate increase (gain ~10) of the collected charge, thu…
Characterization and modeling of crosstalk and afterpulsing in Hamamatsu silicon photomultipliers
Jaime Rosado, Salvador Hidalgo
The crosstalk and afterpulsing in Hamamatsu silicon photomultipliers, called Multi-Pixel Photon Counters (MPPCs), have been studied in depth. Several components of the correlated n…