activity
20152022
most citedBeam test results of a 16 ps timing system based on ultra-fast silicon detectors

182 citations · 435 across the 12 of their papers we have counts for

collaborators

12 papers

physics.ins-det2022★ 6 cited

Overview of CNM LGAD results: Boron Si-on-Si and epitaxial wafers

Chiara Grieco, Lucía Castillo García, Albert Doblas Moreno +6

Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra p-layer below the collection electrode which provides signal amplification. When the primary electrons…

physics.ins-det2022★ 5 cited

First Results for the pLGAD Sensor for Low-Penetrating Particles

Waleed Khalid, Manfred Valentan, Albert Doblas +9

Silicon sensors are the go-to technology for high-precision sensors in particle physics. But only recently low-noise silicon sensors with internal amplification became available. T…

physics.ins-det2022

Inverse Low Gain Avalanche Detector (iLGAD) Periphery Design for X-Ray Applications

A. Doblas, D. Flores, S. Hidalgo +7

LGAD technology is established within the field of particle physics, as the baseline technology for the timing detectors of both the ATLAS and CMS upgrades at the HL-LHC. Pixelated…

physics.ins-det2019★ 11 cited

Results on Proton-Irradiated 3D Pixel Sensors Interconnected to RD53A Readout ASIC

Jordi Duarte-Campderros, Esteban Curras, Marcos Fernandez +19

Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are reported. Sensors from FBK (Italy) and IMB-CNM (Spain) have been tested before…

physics.ins-det2019★ 63 cited

Timing performance of small cell 3D silicon detectors

G. Kramberger, V. Cindro, D. Flores +8

A silicon 3D detector with a single cell of 50x50 um2 was produced and evaluated for timing applications. The measurements of time resolution were performed for 90Sr electrons with…

physics.ins-det2018★ 6 cited

First study of small-cell 3D Silicon Pixel Detectors for the High Luminosity LHC

E. Currás, J. Duarte-Campderrós, M. Fernández +14

A study of 3D pixel sensors of cell size 50 μm x 50 μm fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout…