80 citations · 214 across the 24 of their papers we have counts for
4 papers · 1 filter
Control of threshold voltages in Si/SiGe quantum devices via optical illumination
M. A. Wolfe, Brighton X. Coe, Justin S. Edwards +9
Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events o…
Reducing strain fluctuations in quantum dot devices by gate-layer stacking
Collin C. D. Frink, Talise Oh, E. S. Joseph +5
Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced p…
Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations
Benjamin D. Woods, Hudaiba Soomro, E. S. Joseph +4
Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails…
Realizing Majorana Kramers pairs in two-channel InAs-Al nanowires with highly misaligned electric fields
Benjamin D Woods, Mark Friesen
Common proposals for realizing topological superconductivity and Majorana zero modes in semiconductor-superconductor hybrids require large magnetic fields, which paradoxically supp…