13 citations · 19 across the 6 of their papers we have counts for
6 papers
Confinement drives valley splitting above 4K in buried silicon quantum wells
Davide Degli Esposti, Emma Catherine Brann, Asser Elsayed +3
Controlling the energy scales of a quantum system is essential for defining robust qubits. In silicon spin qubits, the nearly degenerate conduction-band valleys create a leakage ch…
The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe
Merritt P. R. Losert, Utkan Güngördü, S. N. Coppersmith +2
In Si quantum dot systems, large magnetic field gradients are needed to implement spin rotations via electric dipole spin resonance (EDSR). By increasing the effective electron dip…
Bayesian and geometric analyses of power spectral densities of spin qubits in Si/SiGe quantum dot devices
Yujun Choi, Hruday Mallubhotla, Mark Friesen +2
Charge noise with a power-law spectrum poses a significant challenge to high-fidelity operation of spin qubits in semiconductor devices. Recently, considerable experimental work ch…
Engineering Ge profiles in Si/SiGe heterostructures for increased valley splitting
Lucas E. A. Stehouwer, Merrit P. Losert, Maia Rigot +6
Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursue…
Valley Splitting Correlations Across a Silicon Quantum Well Containing Germanium
Jonathan C. Marcks, Emily Eagen, Emma C. Brann +12
Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate e…
Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
Jan Klos, Jan Tröger, Jens Keutgen +10
Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homo…