Anisotropic Dopant and Strain Architectures in WS${}_2$ Nanocrystals Driven by Growth Kinetics

Frederico B. Sousa, Raphaela de Oliveira, Matheus J. S. Matos +11

Dopant distribution in two-dimensional semiconductors is typically assumed to be stochastic, limiting deterministic defect engineering. Here, we show that non-equilibrium growth ki…