51 citations · 113 across the 7 of their papers we have counts for
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Anisotropic Dopant and Strain Architectures in WS Nanocrystals Driven by Growth Kinetics
Frederico B. Sousa, Raphaela de Oliveira, Matheus J. S. Matos +11
Dopant distribution in two-dimensional semiconductors is typically assumed to be stochastic, limiting deterministic defect engineering. Here, we show that non-equilibrium growth ki…
Nonselective generalized measurements as a resource for quantum thermal machines in a double quantum dot
Bruno Carvalho, Jonas F. G. Santos, Moises Rojas
We investigated quantum thermal machines powered by sequential nonselective generalized measurements, taking a double quantum dot with coherent interdot tunneling as a working subs…
Resonance-Enhanced Four-Wave Mixing Imaging for Mapping Defect Regions in Vanadium-Doped WS2 Monolayers
Felipe Menescal, Frederico B. Sousa Mingzu Liu, Ana P. M. Barboza +8
Defect engineering is crucial for tuning 2D transition metal dichalcogenide properties for quantum and optoelectronic applications. While conventional photoluminescence (PL) and Ra…