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cond-mat.mtrl-sci2008★ 3 cited
A crystal cleavage mechanism for UHV STM
A. I. Oreshkin, D. A. Muzychenko, I. V. Radchenko +3
A device for UHV cleavage of crystal specimens for the use with STM has been suggested and developed. We present a device suitable for the precise cleavage of semiconductors. The d…
cond-mat.mtrl-sci1999
Influence of resonant tunneling on the imaging of atomic defects on InAs(110) surfaces by low-temperature scanning tunneling microscopy
A. Depuydt, C. Van Haesendonck, N. S. Maslova +3
We have used a low-temperature scanning tunneling microscope (STM) to study the surface of heavily doped semiconductor InAs crystals. The crystals are cleaved in situ along the (11…