activity
19992013
most citedFormation of Co/Ge intermixing layers after Co deposition on Ge(111)2x1 surfaces

8 citations · 16 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2013

In situ visualization of Ni-Nb bulk metallic glasses phase transition

A. I. Oreshkin, V. N. Mantsevich, S. V. Savinov +5

We report the results of the Ni-based bulk metallic glass structural evolution and crystallization behavior in situ investigation. The X-ray diffraction (XRD), transmission electro…

cond-mat.mtrl-sci2012★ 8 cited

Formation of Co/Ge intermixing layers after Co deposition on Ge(111)2x1 surfaces

D. A. Muzychenko, K. Schouteden, V. I. Panov +1

The formation of a novel surface reconstruction upon Co deposition on freshly cleaved Ge(111)2x1 surfaces is studied by means of scanning tunneling microscopy (STM) at low temperat…

cond-mat.mtrl-sci2008★ 3 cited

A crystal cleavage mechanism for UHV STM

A. I. Oreshkin, D. A. Muzychenko, I. V. Radchenko +3

A device for UHV cleavage of crystal specimens for the use with STM has been suggested and developed. We present a device suitable for the precise cleavage of semiconductors. The d…

cond-mat2002★ 5 cited

Coulomb singularity effects in tunnelling spectroscopy of individual impurities

P. I. Arseyev, N. S. Maslova, V. I. Panov +1

Non-equilibrium Coulomb effects in resonant tunnelling processes through deep impurity states are analyzed. It is shown that Coulomb vertex corrections to the tunnelling transfer a…

cond-mat.mtrl-sci1999

Influence of resonant tunneling on the imaging of atomic defects on InAs(110) surfaces by low-temperature scanning tunneling microscopy

A. Depuydt, C. Van Haesendonck, N. S. Maslova +3

We have used a low-temperature scanning tunneling microscope (STM) to study the surface of heavily doped semiconductor InAs crystals. The crystals are cleaved in situ along the (11…