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cond-mat.mes-hall2020
Moderate bandgap and high carrier mobility simultaneously realized in bilayer silicene by oxidation
Yan Qian, Erjun Kan, Kaiming Deng +1
Semiconductors simultaneously possessing high carrier mobility, moderate bandgap, and ambient environment stability are so important for the modern industry, and Si-based semicondu…
cond-mat.mes-hall2017
Graphene-like quaternary compound SiBCN: a new wide direct band gap semiconductor predicted by a first-principles study
Yan Qian, Haiping Wu, Erjun Kan +1
Due to the lack of two-dimensional silicon-based semiconductors and the fact that most of the components and devices are generated on single-crystal silicon or silicon-based substr…