42 citations · 64 across the 6 of their papers we have counts for
6 papers
Transition between half-metal and ferromagnetic semiconductor induced by silicon vacancy in epitaxial silicene
Yan Qian, Erjun Kan, Kaiming Deng +1
Since the inevitability in experimental synthesis, defects show great importance to many materials. They will deeply regulate the properties of the materials, and then affect the f…
Moderate bandgap and high carrier mobility simultaneously realized in bilayer silicene by oxidation
Yan Qian, Erjun Kan, Kaiming Deng +1
Semiconductors simultaneously possessing high carrier mobility, moderate bandgap, and ambient environment stability are so important for the modern industry, and Si-based semicondu…
Substrate-induced half-metallic property in epitaxial silicene
Yan Qian, Erjun Kan, Kaiming Deng +1
For most practical applications in electronic devices, two-dimensional materials should be transferred onto semiconducting or insulating substrates, since they are usually generate…
Semimetallic single atomic layer silicon allotrope with Dirac fermions
Haiping Wu, Yan Qian, Zhengwei Du +3
Materials with Dirac point are so amazing since the charge carriers are massless and have an effective speed of light. Among the reported two-dimensional silicon allotropes, no one…
Atomically thin mononitrides SiN and GeN: new two-dimensional semiconducting materials
Yan Qian, Zhengwei Du, Renzhu Zhu +3
Low-dimensional Si-based semiconductors are unique materials that can both match well with the Si-based electronics and satisfy the demand of miniaturization in modern industry. Ow…
Graphene-like quaternary compound SiBCN: a new wide direct band gap semiconductor predicted by a first-principles study
Yan Qian, Haiping Wu, Erjun Kan +1
Due to the lack of two-dimensional silicon-based semiconductors and the fact that most of the components and devices are generated on single-crystal silicon or silicon-based substr…