88 citations · 359 across the 15 of their papers we have counts for
12 papers · 1 filter
Design of high-mobility p-type GaN via the piezomobility tensor
Jie-Cheng Chen, Joshua Leveillee, Chris G. Van de Walle +1
Gallium nitride (GaN) is a wide-bandgap semiconductor of significant interest for applications in solid-state lighting, power electronics, and radio-frequency amplifiers. An import…
Intrinsic Limits of Charge Carrier Mobilities in Layered Halide Perovskites
Bruno Cucco, Joshua Leveillee, Viet-Anh Ha +4
Layered halide perovskites have emerged as potential alternatives to three-dimensional halide perovskites due to their improved stability and larger material phase space, allowing…
Electron mobility of SnO2 from first principles
Amanda Wang, Kyle Bushick, Nick Pant +6
The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimenta…
Electron-phonon physics from first principles using the EPW code
Hyungjun Lee, Samuel Poncé, Kyle Bushick +13
EPW is an open-source software for calculations of electron-phonon interactions and related materials properties. The code combines density functional perturba…
Effect of dynamical screening in the Bethe-Salpeter framework: Excitons in crystalline naphthalene
Xiao Zhang, Joshua A. Leveillee, André Schleife
Solving the Bethe-Salpeter equation (BSE) for the optical polarization functions is a first principles means to model optical properties of materials including excitonic effects. O…
Ab initio calculation of carrier mobility in semiconductors including ionized-impurity scattering
Joshua Leveillee, Xiao Zhang, Emmanouil Kioupakis +1
The past decade has seen the emergence of ab initio computational methods for calculating phonon-limited carrier mobilities in semiconductors with predictive accuracy. More realist…
Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN and MgSiN
Joshua Leveillee, Samuel Ponce, Nicholas L. Adamski +2
The key obstacle toward realizing integrated gallium nitride (GaN) electronics is its low hole mobility. Here, we explore the possibility of improving the hole mobility of GaN via…
Ab initio theory of free-carrier absorption in semiconductors
Xiao Zhang, Guangsha Shi, Joshua A. Leveillee +2
The absorption of light by free carriers in semiconductors results in optical loss for all photon wavelengths. Since free-carrier absorption competes with optical transitions acros…
First-principles study of electron transport in ScN
Sai Mu, Andrew J. E. Rowberg, Joshua Leveillee +2
We investigate the conduction-band structure and electron mobility in rocksalt ScN based on density functional theory. The first-principles band structure allows us to obtain band…
Free-electron effects on optical absorption of hybrid perovskite CHNHPbI from first principles
Joshua Leveillee, André Schleife
Hybrid organic-inorganic perovskites, such as methyl-ammonium lead tri-iodide (MAPbI), are interesting candidates for efficient absorber materials in next-generation solar cell…
Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry
Steffen Richter, Oliver Herrfurth, Shirly Espinoza +8
Many linked processes occur concurrently in strongly excited semiconductors, such as interband and intraband absorption, scattering of electrons and holes by the heated lattice, Pa…
Carrier-Specific Femtosecond XUV Transient Absorption of PbI2 Reveals Ultrafast Nonradiative Recombination
Ming-Fu Lin, Max Verkamp, Joshua Leveillee +11
Femtosecond carrier recombination in PbI2 is measured using tabletop high-harmonic extreme ultraviolet (XUV) transient absorption spectroscopy and ultrafast electron diffraction. X…