267 citations · 499 across the 21 of their papers we have counts for
13 papers · 1 filter
All-carbon nanotube solar cell devices mimic photosynthesis
Gideon Oyibo, Thomas Barrett, Sharadh Jois +2
Photovoltaics has two main processes: Optical absorption and power conversion. In photosynthesis, the two equivalent processes are optical absorption and chemical conversion. Where…
Geometric interference in a high-mobility graphene annulus p-n junction device
Son T. Le, Albert F. Rigosi, Joseph A. Hagmann +3
The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance pat…
Scalable Gate-Defined Majorana Fermions in 2D p-Wave Superconductors
Ji Ung Lee
We provide a conceptual framework for developing a scalable topological quantum computer. It relies on forming Majorana fermions using circular electronic gates in two-dimensional…
Strong equilibration of Landau levels edge-states at the graphene edge
Son T. Le, Joseph A. Hagmann, Nikolai Klimov +4
We present the results of an experimental study of the interaction of quantized Landau level (LL) edge-states at the physical edge of graphene by using a graphene pn junction devic…
Super-ideal diodes at the Schottky-Mott limit in gated graphene-WSe heterojunctions
Samuel W. LaGasse, Prathamesh Dhakras, Takashi Taniguchi +2
Metal-semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of the ju…
Atomic scale characterization of graphene p-n junctions for electron-optical applications
Xiaodong Zhou, Alexander Kerelsky, Mirza M. Elahi +8
Graphene p-n junctions offer a potentially powerful approach towards controlling electron trajectories via collimation and focusing in ballistic solid-state devices. The ability of…
Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors
Ramya Cuduvally, Prathamesh Dhakras, Phung Nguyen +2
We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. T…
Tunneling Spectroscopy of Quantum Hall States in Bilayer Graphene PN Networks
Ke Wang, Achim Harzheim, Ji Ung Lee +3
Two dimensional electronic systems under strong magnetic field form quantum Hall (QH) edge states, which propagate along the boundary of a sample with a dissipationless current. En…
Understanding magnetic focusing in graphene - junctions through quantum modeling
Samuel W LaGasse, Ji Ung Lee
We present a quantum model which provides enhanced understanding of recent transverse magnetic focusing experiments on graphene - junctions. Spatially resolved flow maps of l…
Theory of Landau level mixing in heavily graded graphene p-n junctions
Samuel W LaGasse, Ji Ung Lee
We demonstrate the use of a quantum transport model to study heavily graded graphene p-n junctions in the quantum Hall regime. A combination of p-n interface roughness and delta fu…
Ideal Graphene/Silicon Schottky Junction Diodes
Dhiraj Sinha, Ji Ung Lee
The proper understanding of semiconductor devices begins at the metal-semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky…
Reconfigurable p-n Junction Diodes and the Photovoltaic Effect in Exfoliated MoS2 Films
Surajit Sutar, Pratik Agnihotri, Everett Comfort +3
Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS2. In thi…
Manifestation of chiral tunneling at a tilted graphene pn junction
Redwan N. Sajjad, S. Sutar, J. U. Lee +1
Electrons in graphene follow unconventional trajectories at PN junctions, driven by their pseudospintronic degree of freedom. Significant is the prominent angular dependence of tra…