37 citations · 102 across the 8 of their papers we have counts for
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Raman Strain-Shift Measurements and Prediction from First-Principles in Highly-Strained Silicon
Nicolas Roisin, Marie-Stéphane Colla, Jean-Pierre Raskin +1
This work presents how first-principles simulations validated through experimental measurements lead to a new accurate prediction of the expected Raman shift as a function of strai…
Low-Power Silicon Strain Sensor Based on CMOS Current Reference Topology
Nicolas Roisin, Thibault Delhaye, Nicolas André +2
A strain sensor inspired by a Widlar self-biased current source topology called -multiplier is developed to obtain a strain-dependent reference current with high supply rejectio…
Indirect light absorption model for highly strained silicon infrared sensors
Nicolas Roisin, Guillaume Brunin, Gian-Marco Rignanese +2
The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a r…