37 citations · 102 across the 8 of their papers we have counts for
8 papers
Band gap reduction in highly-strained silicon beams predicted by first-principles theory and validated using photoluminescence spectroscopy
Nicolas Roisin, Marie-Stéphane Colla, Romain Scaffidi +3
A theoretical study of the band gap reduction under tensile stress is performed and validated through experimental measurements. First-principles calculations based on density func…
A 1.1- / 0.9-nA Temperature-Independent 213- / 565-ppm/C Self-Biased CMOS-Only Current Reference in 65-nm Bulk and 22-nm FDSOI
Martin Lefebvre, Denis Flandre, David Bol
In many applications, the ability of current references to cope with process, voltage, and temperature (PVT) variations is critical to maintaining system-level performance. However…
Raman Strain-Shift Measurements and Prediction from First-Principles in Highly-Strained Silicon
Nicolas Roisin, Marie-Stéphane Colla, Jean-Pierre Raskin +1
This work presents how first-principles simulations validated through experimental measurements lead to a new accurate prediction of the expected Raman shift as a function of strai…
Low-Power Silicon Strain Sensor Based on CMOS Current Reference Topology
Nicolas Roisin, Thibault Delhaye, Nicolas André +2
A strain sensor inspired by a Widlar self-biased current source topology called -multiplier is developed to obtain a strain-dependent reference current with high supply rejectio…
Indirect light absorption model for highly strained silicon infrared sensors
Nicolas Roisin, Guillaume Brunin, Gian-Marco Rignanese +2
The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a r…
Detection mechanism in highly sensitive ZnO nanowires network gas sensors
Nohora Caicedo, Renaud Leturcq, Jean-Pierre Raskin +2
Metal-oxide nanowires are showing a great interest in the domain of gas sensing due to their large response even at a low temperature, enabling low-power gas sensors. However their…
Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories
Xiaohui Tang, Christophe Krzeminski, Aurélien Lecavelier des Etangs-Levallois +9
We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stor…
Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width
Nicolas Reckinger, Xiaohui Tang, Emmanuel Dubois +4
The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well m…