activity
20152026
most citedCurrent-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

317 citations · 1k across the 15 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

9 papers · 1 filter

cond-mat.mtrl-sci2026

Ab initio study of magnetism in pristine and defective MnBi2Te4

Ana Beatriz Pedro Fontes, Jiaqi Zhou, Simon M. -M. Dubois +1

The magnetic material MnBi2Te4 (MBT) has garnered significant attention due to its unique combination of long-range antiferromagnetism and nontrivial topological electronic propert…

cond-mat.mtrl-sci2026

Disorder-driven symmetry suppression by van der Waals planar defects in a magnetic topological insulator

Rikkie Joris, Heyi Xia, Ana Beatriz Pedro Fontes +17

Magnetic topological insulators offer a platform to control electronic topology through magnetic order, yet reliable routes to tune their properties remain limited. Here, we show t…

cond-mat.mtrl-sci2024

Guidelines for accurate and efficient calculations of mobilities in two-dimensional materials

Jiaqi Zhou, Samuel Poncé, Jean-Christophe Charlier

Emerging two-dimensional (2D) materials bring unprecedented opportunities for electronic applications. The design of high-performance devices requires an accurate prediction of car…

cond-mat.mtrl-sci2023★ 3 cited

Enhanced Spin Hall Ratio in Two-Dimensional Semiconductors

Jiaqi Zhou, Samuel Poncé, Jean-Christophe Charlier

The conversion efficiency from charge current to spin current via spin Hall effect is evaluated by the spin Hall ratio (SHR). Through state-of-the-art calculations invo…

cond-mat.mtrl-sci2019★ 97 cited

Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction

Jiaqi Zhou, Junfeng Qiao, Chun-Gang Duan +3

Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the…

cond-mat.mtrl-sci2018★ 106 cited

Intrinsic Spin Hall Conductivity of MoTe2 and WTe2 Semimetals

Jiaqi Zhou, Junfeng Qiao, Arnaud Bournel +1

We report a comprehensive study on the intrinsic spin Hall conductivity (SHC) of semimetals MoTe2 and WTe2 by ab initio calculation. Large SHC and desirable spin Hall angles have b…

cond-mat.mtrl-sci2018★ 199 cited

Calculation of intrinsic spin Hall conductivity by Wannier interpolation

Junfeng Qiao, Jiaqi Zhou, Zhe Yuan +1

\textit{Ab-initio} calculation of intrinsic spin Hall conductivity (SHC) generally requires a strict convergence criterion and a dense k-point mesh to sample the Brillouin zone, ma…

cond-mat.mtrl-sci2016★ 91 cited

Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures

Shouzhong Peng, Weisheng Zhao, Junfeng Qiao +8

Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM).…

cond-mat.mtrl-sci2015★ 154 cited

Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures

Shouzhong Peng, Mengxing Wang, Hongxin Yang +9

Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in ST…