317 citations · 1k across the 15 of their papers we have counts for
15 papers
Ab initio study of magnetism in pristine and defective MnBi2Te4
Ana Beatriz Pedro Fontes, Jiaqi Zhou, Simon M. -M. Dubois +1
The magnetic material MnBi2Te4 (MBT) has garnered significant attention due to its unique combination of long-range antiferromagnetism and nontrivial topological electronic propert…
Disorder-driven symmetry suppression by van der Waals planar defects in a magnetic topological insulator
Rikkie Joris, Heyi Xia, Ana Beatriz Pedro Fontes +17
Magnetic topological insulators offer a platform to control electronic topology through magnetic order, yet reliable routes to tune their properties remain limited. Here, we show t…
High-throughput calculations of spin Hall conductivity in non-magnetic 2D materials
Jiaqi Zhou, Samuel Poncé, Jean-Christophe Charlier
Spin Hall effect (SHE) in two-dimensional (2D) materials is promising to effectively manipulate spin angular momentum and identify topological properties. In this work, we implemen…
Guidelines for accurate and efficient calculations of mobilities in two-dimensional materials
Jiaqi Zhou, Samuel Poncé, Jean-Christophe Charlier
Emerging two-dimensional (2D) materials bring unprecedented opportunities for electronic applications. The design of high-performance devices requires an accurate prediction of car…
Enhanced Spin Hall Ratio in Two-Dimensional Semiconductors
Jiaqi Zhou, Samuel Poncé, Jean-Christophe Charlier
The conversion efficiency from charge current to spin current via spin Hall effect is evaluated by the spin Hall ratio (SHR). Through state-of-the-art calculations invo…
Impact of Spin-Orbit Coupling on Quantum Transport in Magnetic Tunnel Junction with an anti-ferromagnetic Capping Layer
Shradha Chandrashekhar Koli, Hangyu Zhou, Jiaqi Zhou +2
Using first-principles calculations, we explore the role of an anti-ferromagnetic heavy-metal, L1-IrMn, as a capping layer in a perpendicular magnetic tunnel junction (\emph{p}…
Controllable Spin Current in van der Waals Ferromagnet Fe3GeTe2
Jiaqi Zhou, Jean-Christophe Charlier
The control of spin current is pivotal for spintronic applications, especially for spin-orbit torque devices. Spin Hall effect (SHE) is a prevalent method to generate spin current.…
Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction
Jiaqi Zhou, Junfeng Qiao, Chun-Gang Duan +3
Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the…
Intrinsic Spin Hall Conductivity of MoTe2 and WTe2 Semimetals
Jiaqi Zhou, Junfeng Qiao, Arnaud Bournel +1
We report a comprehensive study on the intrinsic spin Hall conductivity (SHC) of semimetals MoTe2 and WTe2 by ab initio calculation. Large SHC and desirable spin Hall angles have b…
Calculation of intrinsic spin Hall conductivity by Wannier interpolation
Junfeng Qiao, Jiaqi Zhou, Zhe Yuan +1
\textit{Ab-initio} calculation of intrinsic spin Hall conductivity (SHC) generally requires a strict convergence criterion and a dense k-point mesh to sample the Brillouin zone, ma…
Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction
Jiaqi Zhou, Weisheng Zhao, Kaihua Cao +3
Heavy metals with strong spin-orbit coupling (SOC) have been employed to generate spin current to control the magnetization dynamics by spin-orbit torque (SOT). Magnetic tunnel jun…
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
Mengxing Wang, Wenlong Cai, Kaihua Cao +11
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, s…
Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions
Jiaqi Zhou, Weisheng Zhao, Yin Wang +8
It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tun…
Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures
Shouzhong Peng, Weisheng Zhao, Junfeng Qiao +8
Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM).…
Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures
Shouzhong Peng, Mengxing Wang, Hongxin Yang +9
Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in ST…