106 citations · 251 across the 7 of their papers we have counts for
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Formation of Graphene atop a Si adlayer on the C-face of SiC
Jun Li, Qingxiao Wang, Guowei He +6
The structure of the SiC(000-1) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6)…
Formation of a Buffer Layer for Graphene on C-face SiC{0001}
Guowei He, N. Srivastava, R. M. Feenstra
Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in a Si-rich environment are studied using low-energy electron diffraction (LEED) and…
Friedel Oscillation-Induced Energy Gap Manifested as Transport Asymmetry at Monolayer-Bilayer Graphene Boundaries
Kendal W. Clark, X. -G. Zhang, Gong Gu +4
We show that Friedel charge oscillation near an interface opens a gap at the Fermi energy for electrons with wave vectors perpendicular to the interface. If the Friedel gaps on two…
Formation of Graphene on SiC(000-1) Surfaces in Disilane and Neon Environments
Guowei He, N. Srivastava, R. M. Feenstra
The formation of graphene on the SiC(000-1) surface (the C-face of the {0001} surfaces) has been studied, utilizing both disilane and neon environments. In both cases, the interfac…