106 citations · 251 across the 7 of their papers we have counts for
7 papers
Formation of Graphene atop a Si adlayer on the C-face of SiC
Jun Li, Qingxiao Wang, Guowei He +6
The structure of the SiC(000-1) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6)…
Formation of a Buffer Layer for Graphene on C-face SiC{0001}
Guowei He, N. Srivastava, R. M. Feenstra
Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in a Si-rich environment are studied using low-energy electron diffraction (LEED) and…
Friedel Oscillation-Induced Energy Gap Manifested as Transport Asymmetry at Monolayer-Bilayer Graphene Boundaries
Kendal W. Clark, X. -G. Zhang, Gong Gu +4
We show that Friedel charge oscillation near an interface opens a gap at the Fermi energy for electrons with wave vectors perpendicular to the interface. If the Friedel gaps on two…
Formation of Graphene on SiC(000-1) Surfaces in Disilane and Neon Environments
Guowei He, N. Srivastava, R. M. Feenstra
The formation of graphene on the SiC(000-1) surface (the C-face of the {0001} surfaces) has been studied, utilizing both disilane and neon environments. In both cases, the interfac…
Interface Structure of Graphene on SiC(000-1)
N. Srivastava, Guowei He, Luxmi +1
Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in vacuum or in a Si-rich environment are compared. It is found that different interfa…
Graphene formed on SiC under various environments: Comparison of Si-face and C-face
N. Srivastava, Guowei He, Luxmi +3
The morphology of graphene on SiC {0001} surfaces formed in various environments including ultra-high vacuum, 1 atm of argon, and 10^-6 to 10^-4 Torr of disilane is studied by atom…
Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces
Luxmi, N. Srivastava, Guowei He +1
The morphology of graphene formed on the (000-1) surface (the C-face) and the (0001) surface (the Si-face) of SiC, by annealing in ultra-high vacuum or in an argon environment, is…