Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN${}_{\mathbf{x}}$: effects of surface electric fields

T. Auzelle, M. Azadmand, T. Flissikowski +8

GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formatio…