most citedElectronic Structure Shift of Deep Nanoscale Silicon by SiO- vs. SiN-Embedding as Alternative to Impurity Doping

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cond-mat.mtrl-sci2022

Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures

Dirk König, Michael Frentzen, Daniel Hiller +9

The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscal…