N. Wilck

collaborators

2 papers

cond-mat.mtrl-sci2022

Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures

Dirk König, Michael Frentzen, Daniel Hiller +9

The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscal…

cond-mat.mes-hall2019

Electronic Structure Shift of Deep Nanoscale Silicon by SiO $_{2}$ - vs. Si $_{3}$ N $_{4}$ -Embedding as Alternative to Impurity Doping

Dirk König, Noël Wilck, Daniel Hiller +7

Conventional impurity doping of deep nanoscale silicon (dns-Si) used in ultra large scale integration (ULSI) faces serious challenges below the 14 nm technology node. We report on…

Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures

Electronic Structure Shift of Deep Nanoscale Silicon by SiO2​- vs. Si3​N4​-Embedding as Alternative to Impurity Doping

Electronic Structure Shift of Deep Nanoscale Silicon by SiO $_{2}$ - vs. Si $_{3}$ N $_{4}$ -Embedding as Alternative to Impurity Doping