Lightly-strained germanium quantum wells with hole mobility exceeding one million

M. Lodari, O. Kong, M. Rendell +5

We demonstrate that a lightly-strained germanium channel (${\epsilon }_{//}$ = -0.41%) in an undoped Ge/Si${}_{0.1}$Ge${}_{0.9}$ heterostructure field effect transistor supports a 2D h…