146 citations · 410 across the 13 of their papers we have counts for
15 papers
Quantifying Overclaiming Propensity in Frontier LLM Agents
Nolan Smyth, Yorguin-Jose Mantilla-Ramos, Pascal Jr Tikeng Notsawo +6
Frontier coding agents are increasingly trusted to work autonomously for long periods of time, yet what they actually did is often hard to tell from their final response. We quanti…
Activation Steering for Aligned Open-ended Generation without Sacrificing Coherence
Niklas Herbster, Martin Zborowski, Alberto Tosato +2
Alignment in LLMs is more brittle than commonly assumed: misalignment can be induced by adversarial prompts, benign fine-tuning, emergent misalignment, and goal misgeneralization.…
Using Landau quantization to probe disorder in semiconductor heterostructures
Asser Elsayed, Davide Costa, Lucas E. A. Stehouwer +5
Understanding scattering mechanisms in semiconductor heterostructures is crucial to reducing sources of disorder and ensuring high yield and uniformity in large spin qubit arrays.…
Persistent Instability in LLM's Personality Measurements: Effects of Scale, Reasoning, and Conversation History
Tommaso Tosato, Saskia Helbling, Yorguin-Jose Mantilla-Ramos +5
Large language models require consistent behavioral patterns for safe deployment, yet there are indications of large variability that may lead to an instable expression of personal…
Buried unstrained germanium channels: a lattice-matched platform for quantum technology
Davide Costa, Patrick Del Vecchio, Karina Hudson +8
Strained Ge (-Ge) and strained Si (-Si) buried quantum wells have enabled advanced spin-qubit quantum processors. However, in the absence of suitable lattice-matched substrat…
QARPET: A Crossbar Chip for Benchmarking Semiconductor Spin Qubits
Alberto Tosato, Asser Elsayed, Federico Poggiali +5
Large-scale integration of semiconductor spin qubits into quantum processors hinges on the ability to characterize quantum components at scale, a task challenged by their operation…
Exploiting epitaxial strained germanium for scaling low noise spin qubits at the micron-scale
Lucas E. A. Stehouwer, Cécile X. Yu, Barnaby van Straaten +10
Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently…
A vertical gate-defined double quantum dot in a strained germanium double quantum well
Hanifa Tidjani, Alberto Tosato, Alexander Ivlev +6
Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited t…
Germanium wafers for strained quantum wells with low disorder
Lucas E. A. Stehouwer, Alberto Tosato, Davide Degli Esposti +4
We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-…
Hard superconducting gap in germanium
Alberto Tosato, Vukan Levajac, Ji-Yin Wang +9
The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility…
A high-mobility hole bilayer in a germanium double quantum well
A. Tosato, B. M. Ferrari, A. Sammak +4
We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a f…
Lightly-strained germanium quantum wells with hole mobility exceeding one million
M. Lodari, O. Kong, M. Rendell +5
We demonstrate that a lightly-strained germanium channel ( = -0.41%) in an undoped Ge/SiGe heterostructure field effect transistor supports a 2D h…
Effect of quantum Hall edge strips on valley splitting in silicon quantum wells
Brian Paquelet Wuetz, Merritt P. Losert, Alberto Tosato +10
We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on…
Light effective hole mass in undoped Ge/SiGe quantum wells
M. Lodari, A. Tosato, D. Sabbagh +5
We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities ( cm) in…
Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology
A. Sammak, D. Sabbagh, N. W. Hendrickx +10
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positi…