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20192026
most citedUnusual Formation of Point Defect Complexes in the Ultra-wide Band Gap Semiconductor beta-Ga2O3

107 citations · 111 across the 3 of their papers we have counts for

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eess.SY2025

Over 3 kV and Ultra-Low leakage Vertical (011) \b{eta}-Ga2O3 Power Diodes with Engineered Schottky Contact and High-permittivity Dielectric Field Plate

Emerson J. Hollar, Esmat Farzana

We report over 3 kV breakdown voltage and ultra-low leakage (011) \b{eta}-Ga2O3 power devices utilizing Schottky barrier engineering and high-permittivity (\k{appa}) dielectric (Zr…