107 citations · 111 across the 3 of their papers we have counts for
3 papers · 1 filter
Kilovolt-class Vertical (011) \b{eta}-Ga2O3 Schottky Diodes for High Voltage and High Temperature Applications
Emerson J. Hollar, Aaron M. Adams, Nolan S. Hendricks +2
We report kilovolt-class vertical (011) \b{eta}-Ga2O3 Schottky diodes utilizing high-permittivity dielectric TiO2/Al2O3 field-plate for high voltage and high temperature applicatio…
Electro-thermal Co-design of Vertical \b{eta}-Ga2O3 Schottky Diodes with High-permittivity BaTiO3 Field-plate for High-field and Thermal Management
Ahsanul Mohaimeen Audri, Chung-Ping Ho, Emerson J. Hollar +2
This work presents electrothermal co-design of vertical \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) to enhance both heat dissipation and high field management in high-power applic…
Unusual Formation of Point Defect Complexes in the Ultra-wide Band Gap Semiconductor beta-Ga2O3
Jared M. Johnson, Zhen Chen, Joel B. Varley +10
Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the pr…