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20192024
most citedModeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

23 citations · 42 across the 4 of their papers we have counts for

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Showing 2020Show all

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physics.app-ph2020

Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Amin Rassekh, Jean-Michel Sallese, Farzan Jazaeri +2

In this paper, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-ba…