23 citations · 42 across the 4 of their papers we have counts for
4 papers
Simplified EPFL GaN HEMT Model
Farzan Jazaeri, Majid Shalchian, Ashkhen Yesayan +4
This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying o…
Non-Hysteretic Condition in Negative Capacitance Junctionless FETs
Amin Rassekh, Farzan Jazaeri, Jean-Michel Sallese
This paper analyzes the design space stability of negative capacitance double gate junctionless FETs (NCDG JLFET). Using analytical expressions derived from a charge-based model, w…
Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect
Amin Rassekh, Jean-Michel Sallese, Farzan Jazaeri +2
In this paper, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-ba…
Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects
Amin Rassekh, Farzan Jazaeri, Morteza Fathipour +1
In this paper, an analytical predictive model of interface charge traps in symmetric long channel double-gate junctionless transistors is proposed based on a charge-based model. In…