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physics.optics2022
Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells
Paweł Wolny, Henryk Turski, Grzegorz Muziol +6
InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) ha…
physics.optics2021★ 3 cited
GaN-based Bipolar Cascade Lasers with 25nm wide Quantum Wells: Simulation and Analysis
J. Piprek, G. Muziol, M. Siekacz +1
We analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featurin…