14 citations · 31 across the 6 of their papers we have counts for
6 papers
Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells
Paweł Wolny, Henryk Turski, Grzegorz Muziol +6
InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) ha…
Electrically pumped blue laser diodes with nanoporous bottom cladding
Marta Sawicka, Grzegorz Muziol, Natalia Fiuczek +8
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitax…
GaN-based Bipolar Cascade Lasers with 25nm wide Quantum Wells: Simulation and Analysis
J. Piprek, G. Muziol, M. Siekacz +1
We analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featurin…
Polarization doping ab initio verification of the concept charge conservation and nonlocality
Ashfaq Ahmad, Pawel Strak, Pawel Kempisty +10
In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation la…
Inhomogeneous broadening of optical transitions observed in photoluminescence and modulated reflectance of polar and non-polar InGaN quantum wells
Michał Jarema, Marta Gładysiewicz, Łukasz Janicki +5
In this work the broadening of interband transitions in InGaN/GaN quantum wells (QWs) resulting from structural inhomogeneities is analyzed. The role of polarization-induced electr…
Highly efficient optical transition between excited states in wide InGaN quantum wells
Grzegorz Muziol, Henryk Turski, Marcin Siekacz +6
There is a lack of highly efficient light emitting devices (LEDs) operating in the green spectral regime. The devices based on (In,Al)GaN show extremely high efficiencies in violet…