374 citations · 1k across the 20 of their papers we have counts for
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A Si-on-SiC Platform for Interfacing with Vanadium Dopants in the Telecom O-Band
Timothy Draher, Nolan Bitner, Vasileios Niaouris +6
Vanadium color centers in silicon carbide (SiC) offer telecom O-band emission, sub-microsecond optical lifetimes, and second-scale spin relaxation times, rendering them promising c…
Optical and microstructural characterization of Er doped epitaxial cerium oxide on silicon
Gregory D. Grant, Jiefei Zhang, Ignas Masiulionis +15
Rare-earth ion dopants in solid-state hosts are ideal candidates for quantum communication technologies such as quantum memory, due to the intrinsic spin-photon interface of the ra…
Nanocavity-mediated Purcell enhancement of Er in TiO thin films grown via atomic layer deposition
Cheng Ji, Michael T. Solomon, Gregory D. Grant +12
The use of trivalent erbium (Er), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunications devices and shows prom…
A differentiable forward model for the concurrent, multi-peak Bragg coherent x-ray diffraction imaging problem
S. Maddali, T. D. Frazer, N. Delegan +12
We present a general analytic approach to spatially resolve the nano-scale lattice distortion field of strained and defected compact crystals with Bragg coherent x-ray diffraction…
Purcell enhancement of erbium ions in TiO on silicon nanocavities
Alan M. Dibos, Michael T. Solomon, Sean E. Sullivan +9
Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication netwo…
Development of a Scalable Quantum Memory Platform -- Materials Science of Erbium-Doped TiO Thin Films on Silicon
Manish Kumar Singh, Gary Wolfowicz, Jianguo Wen +6
Rare-earth ions (REI) have emerged as an attractive candidate for solid-state qubits, particularly as a quantum memory. Their 4f-4f transitions are shielded by filled 5s and 5p orb…