56 citations · 104 across the 5 of their papers we have counts for
3 papers · 1 filter
Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors
S. D. Baranovskii, A. V. Nenashev, J. O. Oelerich +3
Charge transport in amorphous oxide semiconductors is often described as the band transport affected by disorder in the form of random potential barriers (RB). Theoretical studies…
Percolation description of charge transport in amorphous oxide semiconductors
A. V. Nenashev, J. O. Oelerich, S. H. M. Greiner +3
The charge transport mechanism in amorphous oxide semiconductors (AOS) is a matter of controversial debates. Most theoretical studies so far neglected the percolation nature of the…
Ab-initio calculation of band alignments for opto-electronic simulations
Jan Oliver Oelerich, Maria J. Weseloh, Kerstin Volz +1
A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,G…