3 papers
cond-mat.dis-nn2019
Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors
S. D. Baranovskii, A. V. Nenashev, J. O. Oelerich +3
Charge transport in amorphous oxide semiconductors is often described as the band transport affected by disorder in the form of random potential barriers (RB). Theoretical studies…
cond-mat.dis-nn2019
Percolation description of charge transport in amorphous oxide semiconductors
A. V. Nenashev, J. O. Oelerich, S. H. M. Greiner +3
The charge transport mechanism in amorphous oxide semiconductors (AOS) is a matter of controversial debates. Most theoretical studies so far neglected the percolation nature of the…
cond-mat.mtrl-sci2019
Ab-initio calculation of band alignments for opto-electronic simulations
Jan Oliver Oelerich, Maria J. Weseloh, Kerstin Volz +1
A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,G…