activity
20172024
most citedPercolation description of charge transport in amorphous oxide semiconductors

56 citations · 104 across the 5 of their papers we have counts for

collaborators

5 papers

eess.SP2024

Coexistence of Mobile Broadband IMT Systems and UWB Keyless Entry Systems above 6.5 GHz

Carsten Monka-Ewe, Lukas Berkelmann, Richard Wolf +8

The ever-increasing need for spectrum for mobile broadband systems has led to the recent allocation of spectral resources for International Mobile Telecommunication (IMT) services…

cond-mat.dis-nn2019★ 9 cited

Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors

S. D. Baranovskii, A. V. Nenashev, J. O. Oelerich +3

Charge transport in amorphous oxide semiconductors is often described as the band transport affected by disorder in the form of random potential barriers (RB). Theoretical studies…

cond-mat.dis-nn2019★ 56 cited

Percolation description of charge transport in amorphous oxide semiconductors

A. V. Nenashev, J. O. Oelerich, S. H. M. Greiner +3

The charge transport mechanism in amorphous oxide semiconductors (AOS) is a matter of controversial debates. Most theoretical studies so far neglected the percolation nature of the…

cond-mat.mtrl-sci2019

Ab-initio calculation of band alignments for opto-electronic simulations

Jan Oliver Oelerich, Maria J. Weseloh, Kerstin Volz +1

A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,G…

cond-mat.mes-hall2017★ 39 cited

Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors

A. V. Nenashev, J. O. Oelerich, A. V. Dvurechenskii +2

Using analytical arguments and computer simulations we show that the dependence of the hopping carrier mobility on the electric field in a system of random sites is det…