12 citations · 19 across the 3 of their papers we have counts for
3 papers
Analysing the linearised radially polarised light source for improved precision in strain measurement using micro-Raman spectroscopy
V. Prabhakara, T. Nuytten, H. Bender +3
Strain engineering in semiconductor transistor devices has become vital in the semiconductor industry due to the ever increasing need for performance enhancement at the nanoscale.…
HAADF-STEM block-scanning strategy for local measurement of strain at the nanoscale
Viveksharma Prabhakara, Daen Jannis, Giulio Guzzinati +3
Lattice strain measurement of nanoscale semiconductor devices is crucial for the semiconductor industry as strain substantially improves the electrical performance of transistors.…
Strain measurement in semiconductor FinFET devices using a novel moiré demodulation technique
Viveksharma Prabhakara, Daen Jannis, Armand Béché +2
Moiré fringes are used throughout a wide variety of applications in physics and engineering to bring out small variations in an underlying lattice by comparing with another referen…