34 citations · 34 across the 1 of their papers we have counts for
4 papers
Intrinsic point defects and the - and -type dopability of the narrow gap semiconductors GaSb and InSb
J. Buckeridge, T. D. Veal, C. R. A. Catlow +1
The presence of defects in the narrow-gap semiconductors GaSb and InSb affects their dopability and hence applicability for a range of optoelectronic applications. Here, we report…
The electronic band structure and optical properties of boron arsenide
John Buckeridge, David O. Scanlon
We compute the electronic band structure and optical properties of boron arsenide using the relativistic quasiparticle self-consistent approach, including electron-hole intera…
Donor and Acceptor Characteristics of Native Point Defects in GaN
Zijuan Xie, Yu Sui, John Buckeridge +8
The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood.…
Assignment of multiband luminescence due to the gallium vacancy-oxygen defect complex in GaN
Zijuan Xie, Yu Sui, John Buckeridge +3
Oxygen is the most common unintentional impurity found in GaN. We study the interaction between substitutional oxygen (ON) and the gallium vacancy (VGa) to form a point defect comp…