Hongyu Yu

activity

20192021

most citedAchieving sub-1 Ohm-mm Non-Recess S/D Contact Resistance in GaN HEMTs Utilizing Simple CMOS Compatible La/Ti/Al/Ti Metal Contacts

2 citations · 4 across the 3 of their papers we have counts for

collaborators

Showing cond-mat.mtrl-sciShow all

2 papers · 1 filter

cond-mat.mtrl-sci2021

Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs

Guangnan Zhou, Yang Jiang, Gaiying Yang +5

We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing…

cond-mat.mtrl-sci2019

Exploration of the bright and dark exciton landscape and fine structure of MoS $_{2}$ (using G $_{0}$ W $_{0}$ -BSE)

Hongyu Yu, Magdalena Laurien, Zhenpeng Hu +1

Spectral ordering between dark and bright excitons in transition metal dichalcogenides is of increasing interest for optoelectronic applications. However, little is known about dar…

Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs

Exploration of the bright and dark exciton landscape and fine structure of MoS2​ (using G0​W0​-BSE)

Exploration of the bright and dark exciton landscape and fine structure of MoS $_{2}$ (using G $_{0}$ W $_{0}$ -BSE)