RF-quantum capacitance of the topological insulator Bi2Se3 in the bulk depleted regime for field-effect transistors

A. Inhofer, J. Duffy, M. Boukhicha +9

A Metal-dielectric-topological insulator capacitor device based on hBN-encapsulated CVD grown Bi2Se3 is realized and investigated in the radio frequency regime. The RF quantum capa…