104 citations · 107 across the 4 of their papers we have counts for
4 papers
RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors
Andreas Inhofer, Taylor Wilde, Jack Duffy +9
The topological state that emerges at the surface of a topological insulator (TI) and at the TI-substrate interface are studied in metal-hBN-Bi2Se3 capacitors. By measuring the RF…
Contact gating at GHz frequency in graphene
Q. Wilmart, A. Inhofer, M. Boukhicha +7
The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the s…
RF-quantum capacitance of the topological insulator Bi2Se3 in the bulk depleted regime for field-effect transistors
A. Inhofer, J. Duffy, M. Boukhicha +9
A Metal-dielectric-topological insulator capacitor device based on hBN-encapsulated CVD grown Bi2Se3 is realized and investigated in the radio frequency regime. The RF quantum capa…
Anharmonic phonons in few layer MoS: Raman spectroscopy of ultra low energy compression and shear modes
Mohamed Boukhicha, Matteo Calandra, Marie-Aude Measson +2
Molybdenum disulfide (MoS) is a promising material for making two-dimensional crystals and flexible electronic and optoelectronic devices at the nanoscale. MoS flakes can s…