5 papers · 1 filter
RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors
Andreas Inhofer, Taylor Wilde, Jack Duffy +9
The topological state that emerges at the surface of a topological insulator (TI) and at the TI-substrate interface are studied in metal-hBN-Bi2Se3 capacitors. By measuring the RF…
Contact gating at GHz frequency in graphene
Q. Wilmart, A. Inhofer, M. Boukhicha +7
The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the s…
RF-quantum capacitance of the topological insulator Bi2Se3 in the bulk depleted regime for field-effect transistors
A. Inhofer, J. Duffy, M. Boukhicha +9
A Metal-dielectric-topological insulator capacitor device based on hBN-encapsulated CVD grown Bi2Se3 is realized and investigated in the radio frequency regime. The RF quantum capa…
Volkov-Pankratov states in topological heterojunctions
S. Tchoumakov, V. Jouffrey, A. Inhofer +4
We show that a smooth interface between two insulators of opposite topological Z2 indices possesses multiple surface states, both massless and massive. While the massless surface s…
Observation of Volkov-Pankratov states in topological HgTe heterojunctions using high-frequency compressibility
A. Inhofer, S. Tchoumakov, B. A. Assaf +13
It is well established that topological insulators sustain Dirac fermion surface states as a consequence of band inversion in the bulk. These states have a helical spin polarizatio…