2 papers
cond-mat.mes-hall2019
RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors
Andreas Inhofer, Taylor Wilde, Jack Duffy +9
The topological state that emerges at the surface of a topological insulator (TI) and at the TI-substrate interface are studied in metal-hBN-Bi2Se3 capacitors. By measuring the RF…
cond-mat.mes-hall2018
Contact gating at GHz frequency in graphene
Q. Wilmart, A. Inhofer, M. Boukhicha +7
The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the s…